A Simple and Reliable Electrical Method for Measuring the Junction Temperature and Thermal Resistance of 4H-SiC Power Bipolar Junction Transistors
2009 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 600-603, 1171-1174 p.Article in journal (Refereed) Published
To determine the maximum allowed power dissipation in a power transistor, it is important to determine the relationship between junction temperature and power dissipation. This work presents a new method for measuring the junction temperature in a SiC bipolar junction transistor (BJT) that is self-heated during DC forward conduction. The method also enables extraction of the thermal resistance between junction and ambient by measurements of the junction temperature as function of DC power dissipation. The basic principle of the method is to determine the temperature dependent IN characteristics of the transistor under pulsed conditions with negligible self-heating, and compare these results with DC measurements with self-heating. Consistent results were obtained from two independent temperature measurements using the temperature dependence of the current gain, and the temperature dependence of the base-emitter IN characteristics, respectively.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2009. Vol. 600-603, 1171-1174 p.
Bipolar Junction Transistor, Junction Temperature, Thermal resistance
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-31263DOI: 10.4028/www.scientific.net/MSF.600-603.1171ISI: 000263555300281ScopusID: 2-s2.0-84955460171OAI: oai:DiVA.org:kth-31263DiVA: diva2:405466
International Conference on Silicon Carbide and Related Materials, Otsu, JAPAN, OCT 14-19, 2007
QC 201103222011-03-222011-03-112016-05-11Bibliographically approved