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1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-resistance
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
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2009 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 600-603, 1151-1154 p.Article in journal (Refereed) Published
Abstract [en]

This paper reports a 4H-SiC bipolar junction transistor (BJT) with a breakdown voltage (BVCEO) of 1200 V, a maximum current gain (beta) of 60 and the low on-resistance (Rsp-on)of 5.2 m Omega cm(2). The high gain is attributed to an improved surface passivation SiO2 layer which was grown in N2O ambient in a diffusion furnace. The SiC BJTs with passivation oxide grown in N2O ambient show less emitter size dependence than reference SiC BJTs, with conventional SiO2 passivation, due to a reduced surface recombination current. SiC BJT devices with an active area of 1.8 mm x 1.8 mm showed a current gain of 53 in pulsed mode and a forward voltage drop Of V-CE=2V at I-C=15 A (J(C)=460 A/cm(2)).

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2009. Vol. 600-603, 1151-1154 p.
Keyword [en]
Bipolar Junction Transistor, Emitter size effect, Surface recombination, Junction Termination
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-31262DOI: 10.4028/www.scientific.net/MSF.600-603.1151ISI: 000263555300276Scopus ID: 2-s2.0-84955492733OAI: oai:DiVA.org:kth-31262DiVA: diva2:405491
Conference
International Conference on Silicon Carbide and Related Materials, Otsu, JAPAN, OCT 14-19, 2007
Note

QC 20110322

Available from: 2011-03-22 Created: 2011-03-11 Last updated: 2017-12-11Bibliographically approved

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Zetterling, Carl-Mikael

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