1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-resistance
2009 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 600-603, 1151-1154 p.Article in journal (Refereed) Published
This paper reports a 4H-SiC bipolar junction transistor (BJT) with a breakdown voltage (BVCEO) of 1200 V, a maximum current gain (beta) of 60 and the low on-resistance (Rsp-on)of 5.2 m Omega cm(2). The high gain is attributed to an improved surface passivation SiO2 layer which was grown in N2O ambient in a diffusion furnace. The SiC BJTs with passivation oxide grown in N2O ambient show less emitter size dependence than reference SiC BJTs, with conventional SiO2 passivation, due to a reduced surface recombination current. SiC BJT devices with an active area of 1.8 mm x 1.8 mm showed a current gain of 53 in pulsed mode and a forward voltage drop Of V-CE=2V at I-C=15 A (J(C)=460 A/cm(2)).
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2009. Vol. 600-603, 1151-1154 p.
Bipolar Junction Transistor, Emitter size effect, Surface recombination, Junction Termination
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-31262DOI: 10.4028/www.scientific.net/MSF.600-603.1151ISI: 000263555300276ScopusID: 2-s2.0-84955492733OAI: oai:DiVA.org:kth-31262DiVA: diva2:405491
International Conference on Silicon Carbide and Related Materials, Otsu, JAPAN, OCT 14-19, 2007
QC 201103222011-03-222011-03-112016-05-11Bibliographically approved