Backside Nickel Based Ohmic Contacts to n-type Silicon Carbide
2009 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 600-603, 635-638 p.Article in journal (Refereed) Published
This work focuses on Ni ohmic contacts to the C-face (backside) of n-type 4H-SiC substrates. Low-resistive ohmic contacts to the wafer backside are important especially for vertical power devices. Ni contacts were deposited using E-beam evaporation and annealed at different temperatures (700-1050 degrees C) in RTP to obtain optimum conditions for forming low resistive ohmic contacts. Our results indicate that 1 min annealing at temperatures between 950 and 1000 degrees C provides high quality ohmic contacts with a contact resistivity of 2.3x10(-5) Omega cm(2). Also our XRD results show that different Ni silicide phases appear in this annealing temperature range.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2009. Vol. 600-603, 635-638 p.
Ohmic contact, Ni silicide
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-31260DOI: 10.4028/www.scientific.net/MSF.600-603.635ISI: 000263555300151ScopusID: 2-s2.0-84955446480OAI: oai:DiVA.org:kth-31260DiVA: diva2:405498
International Conference on Silicon Carbide and Related Materials, Otsu, JAPAN, OCT 14-19, 2007
QC 201507292011-03-222011-03-112015-07-29Bibliographically approved