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Backside Nickel Based Ohmic Contacts to n-type Silicon Carbide
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0001-8108-2631
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2009 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 600-603, 635-638 p.Article in journal (Refereed) Published
Abstract [en]

This work focuses on Ni ohmic contacts to the C-face (backside) of n-type 4H-SiC substrates. Low-resistive ohmic contacts to the wafer backside are important especially for vertical power devices. Ni contacts were deposited using E-beam evaporation and annealed at different temperatures (700-1050 degrees C) in RTP to obtain optimum conditions for forming low resistive ohmic contacts. Our results indicate that 1 min annealing at temperatures between 950 and 1000 degrees C provides high quality ohmic contacts with a contact resistivity of 2.3x10(-5) Omega cm(2). Also our XRD results show that different Ni silicide phases appear in this annealing temperature range.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2009. Vol. 600-603, 635-638 p.
Keyword [en]
Ohmic contact, Ni silicide
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-31260DOI: 10.4028/www.scientific.net/MSF.600-603.635ISI: 000263555300151Scopus ID: 2-s2.0-84955446480OAI: oai:DiVA.org:kth-31260DiVA: diva2:405498
Conference
International Conference on Silicon Carbide and Related Materials, Otsu, JAPAN, OCT 14-19, 2007
Note

QC 20150729

Available from: 2011-03-22 Created: 2011-03-11 Last updated: 2017-12-11Bibliographically approved

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Zetterling, Carl-Mikael

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