A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond
2009 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2007 / [ed] Suzuki A; Okumura H; Kimoto T; Fuyuki T; Fukuda K; Nishizawa S, 2009, Vol. 600-603, 453-456 p.Conference paper (Refereed)
The boron diffusion in three kinds of group IV semiconductors: silicon, silicon carbide and synthetic diamond has been studied by secondary ion mass spectrometry. Ion implantation of 300 keV, B-11-ions to a dose of 2 x 10(14) cm(-2) has been performed. The samples are subsequently annealed at temperatures ranging from 800 to 1650 degrees C for 5 minutes up to 8 hours. In silicon and silicon carbide, the boron diffusion is attributed to a transient process and the level of out-diffusion is correlated to intrinsic carrier concentration. No transient, out-diffused, boron tail is revealed in diamond at these temperatures.
Place, publisher, year, edition, pages
2009. Vol. 600-603, 453-456 p.
, MATERIALS SCIENCE FORUM, ISSN 0255-5476 ; 600-603
Boron, SIMS, Diffusion, 4H-SiC, Diamond
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-31259DOI: 10.4028/www.scientific.net/MSF.600-603.453ISI: 000263555300108ScopusID: 2-s2.0-84955438933OAI: oai:DiVA.org:kth-31259DiVA: diva2:405524
International Conference on Silicon Carbide and Related Materials, Otsu, JAPAN, OCT 14-19, 2007
QC 201103222011-03-222011-03-112011-03-22Bibliographically approved