Kinetic Model of SiGe Selective Epitaxial Growth Using RPCVD Technique
2010 (English)In: Sige, Ge, And Related Compounds 4: Materials, Processing, And Devices / [ed] D. Harame, J. Boquet, M. Östling, Y. Yeo, G. Masini, M. Caymax, T. Krishnamohan, B. Tillack, S. Bedell, S. Miyazaki, A. Reznicek, S. Koester, Electrochemical Society, 2010, Vol. 33, 581-593 p.Conference paper (Refereed)
Recently, selective epitaxial growth (SEG) of B-doped SiGe layers has been used in recessed source/drain (S/D) of pMOSFETs. The uniaxial induced strain enhances the carrier mobility in the channel. In this work, a detailed model for SEG of SiGe has been developed to predict the growth rate and Ge content of layers in dichlorosilane(DCS)-based epitaxy using a reduced-pressure CVD reactor. The model considers each gas precursor contributions from the gas-phase and the surface. The gas flow and temperature distribution were simulated in the CVD reactor and the results were exerted as input parameters for Maxwell energy distribution. The diffusion of molecules from the gas boundaries was calculated by Fick's law and Langmuir isotherm theory (in non-equilibrium case) was applied to analyze the surface. The pattern dependency of the selective growth was also modeled through an interaction theory between different subdivisions of the chips. Overall, a good agreement between the kinetic model and the experimental data were obtained.
Place, publisher, year, edition, pages
Electrochemical Society, 2010. Vol. 33, 581-593 p.
, ECS Transactions, ISSN 1938-5862
Chemical-Vapor-Deposition, Silicon, Parameters, Layer, Hcl, Cvd
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-31750DOI: 10.1149/1.3487589ISI: 000314957600060ScopusID: 2-s2.0-79952668655ISBN: 978-1-60768-175-5OAI: oai:DiVA.org:kth-31750DiVA: diva2:406220
4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting; Las Vegas, NV; United States; 10 October 2010 through 15 October 2010
QC 201103252011-03-252011-03-252013-12-18Bibliographically approved