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Kinetic Model of SiGe Selective Epitaxial Growth Using RPCVD Technique
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
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2010 (English)In: Sige, Ge, And Related Compounds 4: Materials, Processing, And Devices / [ed] D. Harame, J. Boquet, M. Östling, Y. Yeo, G. Masini, M. Caymax, T. Krishnamohan, B. Tillack, S. Bedell, S. Miyazaki, A. Reznicek, S. Koester, Electrochemical Society, 2010, Vol. 33, 581-593 p.Conference paper, Published paper (Refereed)
Abstract [en]

Recently, selective epitaxial growth (SEG) of B-doped SiGe layers has been used in recessed source/drain (S/D) of pMOSFETs. The uniaxial induced strain enhances the carrier mobility in the channel. In this work, a detailed model for SEG of SiGe has been developed to predict the growth rate and Ge content of layers in dichlorosilane(DCS)-based epitaxy using a reduced-pressure CVD reactor. The model considers each gas precursor contributions from the gas-phase and the surface. The gas flow and temperature distribution were simulated in the CVD reactor and the results were exerted as input parameters for Maxwell energy distribution. The diffusion of molecules from the gas boundaries was calculated by Fick's law and Langmuir isotherm theory (in non-equilibrium case) was applied to analyze the surface. The pattern dependency of the selective growth was also modeled through an interaction theory between different subdivisions of the chips. Overall, a good agreement between the kinetic model and the experimental data were obtained.

Place, publisher, year, edition, pages
Electrochemical Society, 2010. Vol. 33, 581-593 p.
Series
ECS Transactions, ISSN 1938-5862
Keyword [en]
Chemical-Vapor-Deposition, Silicon, Parameters, Layer, Hcl, Cvd
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-31750DOI: 10.1149/1.3487589ISI: 000314957600060Scopus ID: 2-s2.0-79952668655ISBN: 978-1-60768-175-5 (print)OAI: oai:DiVA.org:kth-31750DiVA: diva2:406220
Conference
4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting; Las Vegas, NV; United States; 10 October 2010 through 15 October 2010
Note

QC 20110325

Available from: 2011-03-25 Created: 2011-03-25 Last updated: 2013-12-18Bibliographically approved

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