Heteroepitaxial Growth of Indium Phosphide from Nano-openings Made by Masking on a Si(001) Wafer
2010 (English)In: 2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2010Conference paper (Refereed)
We investigate nano-eptiaxial lateral overgrowth (NELOG) of InP from the nano-sized openings on a seed layer on the silicon wafer, by Hydride Vapor Phase Epitaxy (HVPE). The grown layers were analyzed by cathodoluminescence (CL) in situ a scanning electron microscope (SEM) and transmission electron microscopy (TEM). The results from InP: S growth shows that the boundary plane of the grown layer has a major impact on the luminescence, indicating preferential orientation-dependent doping. Moreover, although there is clear evidence that most of the threading dislocations originating in the InP seed layer/Si interface are blocked by the mask, it appears that new dislocations are generated. Some of these dislocations are bounding planar defects such as stacking faults, possibly generated by unevenness in the mask. Finally, patterns where coalescence takes place at higher thickness seem to result in a rougher surface.
Place, publisher, year, edition, pages
, International Conference on Indium Phosphide and Related Materials, ISSN 1092-8669
ELOG, heteroepitaxy, HVPE, CL, TEM, InP/Si, dislocations
IdentifiersURN: urn:nbn:se:kth:diva-31910ISI: 000287417700037ScopusID: 2-s2.0-77955950876ISBN: 978-1-4244-5920-9OAI: oai:DiVA.org:kth-31910DiVA: diva2:406874
22nd International Conference on Indium Phosphide and Related Materials, Kagawa, JAPAN, MAY 31-JUN 04, 2010