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Dependence of Ordering Kinetics of FePt Thin Films on Different Substrates
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
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2008 (English)In: IEEE transactions on magnetics, ISSN 0018-9464, E-ISSN 1941-0069, Vol. 44, no 11, 3539-3542 p.Article in journal (Refereed) Published
Abstract [en]

FePt thin films are deposited on SMO3, MgO, and a 2 nm-FeOx underlayer on an Si substrate at room temperature and then annealed at elevated temperatures. Studies of the L1(0) ordering process in each case show that the ordering temperature for the FePt film on the nonepitaxial Si/FeOx substrate is similar to 150 degrees C lower than the epitaxial FePt films deposited on MgO and SrTiO3 substrates. We argue that internal stresses arising from lattice defects and a recrystallizing process as well as thermal strain from differences in thermal expansion between substrate and film are responsible for the differences in ordering kinetics from the A1 to L1(0) phase of FePt on the various substrates.

Place, publisher, year, edition, pages
2008. Vol. 44, no 11, 3539-3542 p.
Keyword [en]
Epitaxial growth, FePt, nonepitaxial growth, ordering kinetics
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-31559DOI: 10.1109/TMAG.2008.2001609ISI: 000262221300044Scopus ID: 2-s2.0-77955152113OAI: oai:DiVA.org:kth-31559DiVA: diva2:408115
Note
QC 20110404Available from: 2011-04-04 Created: 2011-03-18 Last updated: 2017-12-11Bibliographically approved

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