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Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
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2011 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 98, no 4, 042108- p.Article in journal (Refereed) Published
Abstract [en]

Epitaxial Ti3SiC2 (0001) thin film contacts were grown on doped 4H-SiC (0001) using magnetron sputtering in an ultra high vacuum system. The specific contact resistance was investigated using linear transmission line measurements. Rapid thermal annealing at 950 degrees C for 1 min of as-deposited films yielded ohmic contacts to n-type SiC with contact resistances in the order of 10(-4) Omega cm(2). Transmission electron microscopy shows that the interface between Ti3SiC2 and n-type SiC is atomically sharp with evidence of interfacial ordering after annealing. (c) 2011 American Institute of Physics.

Place, publisher, year, edition, pages
2011. Vol. 98, no 4, 042108- p.
Keyword [en]
TITANIUM, GROWTH, LAYERS
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-32032DOI: 10.1063/1.3549198ISI: 000286676600025Scopus ID: 2-s2.0-79551650146OAI: oai:DiVA.org:kth-32032DiVA: diva2:408608
Note
QC 20110405Available from: 2011-04-05 Created: 2011-04-04 Last updated: 2017-12-11Bibliographically approved

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Zetterling, Carl-Mikael

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