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Silicon Carbide Based Power Devices
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
2010 (English)In: 2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST, 2010, 13.3.1-13.3.4 p.Conference paper, Published paper (Refereed)
Abstract [en]

Silicon carbide is considered as a strong power semiconductor material candidate to address the emerging market of hybrid electrical vehicle, photovoltaic inverter applications as well as power supplies. This paper presents the current technology status on the most promising device types that are or soon will be available on the market.

Place, publisher, year, edition, pages
2010. 13.3.1-13.3.4 p.
Series
International Electron Devices Meeting
Keyword [en]
BIPOLAR JUNCTION TRANSISTORS, EMITTER CURRENT GAIN, MODE SIC VJFETS, 4H-SIC BJTS, 1200 V, PERFORMANCE, AREA, FABRICATION, CAPABILITY, OPERATION
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-32017DOI: 10.1109/IEDM.2010.5703354ISI: 000287997300078ISBN: 978-1-4244-7419-6 (print)OAI: oai:DiVA.org:kth-32017DiVA: diva2:408985
Conference
International Electron Devices Meeting (IEDM), San Francisco, CA, DEC 06-08, 2010
Note
QC 20110406Available from: 2011-04-06 Created: 2011-04-04 Last updated: 2011-04-06Bibliographically approved

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