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Ultraviolet light sensitive In-doped ZnO thin film field effect transistor printed by inkjet technique
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Engineering Material Physics.
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Engineering Material Physics.ORCID iD: 0000-0003-2170-0076
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Engineering Material Physics.
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2011 (English)In: Physica Status Solidi (A) Applications and Materials, ISSN 1862-6300, Vol. 208, no 1, 206-209 p.Article in journal (Refereed) Published
Abstract [en]

This indium-doped zinc oxide field effect transistor (IZO-FET) with a large ultraviolet (UV) detection sensitivity has been fabricated by inkjet printing technique. In darkness, the IZO-FETs exhibit a saturation current level of about 10 mu A, an incremental mobility as high as 8 cm(2) V-1 s(-1), and a current on/off ratio of 10(4)-10(5). When illuminated by 363 nm, 1.7 mW cm(-2) UV light, the IZO-FET displays a photocurrent of 2 mA, and a darkness current of similar to 20 nA at an optimized gate voltage of -2 V. The device is effectively turned on in about 5 ms and off in 10 ms. These results suggest that the IZO-FET fabricated by inkjet printing could be a low cost highly sensitive UV photodetector.

Place, publisher, year, edition, pages
2011. Vol. 208, no 1, 206-209 p.
Keyword [en]
field effect transistors, In doping, inkjet printing, UV photodetectors, ZnO
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-32000DOI: 10.1002/pssa.201026264ISI: 000287295100034Scopus ID: 2-s2.0-78651362437OAI: oai:DiVA.org:kth-32000DiVA: diva2:409236
Note
QC 20110407Available from: 2011-04-07 Created: 2011-04-04 Last updated: 2011-04-07Bibliographically approved

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Ström, ValterBelova, Lyubov

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