Ultraviolet light sensitive In-doped ZnO thin film field effect transistor printed by inkjet technique
2011 (English)In: Physica Status Solidi (A) Applications and Materials, ISSN 1862-6300, Vol. 208, no 1, 206-209 p.Article in journal (Refereed) Published
This indium-doped zinc oxide field effect transistor (IZO-FET) with a large ultraviolet (UV) detection sensitivity has been fabricated by inkjet printing technique. In darkness, the IZO-FETs exhibit a saturation current level of about 10 mu A, an incremental mobility as high as 8 cm(2) V-1 s(-1), and a current on/off ratio of 10(4)-10(5). When illuminated by 363 nm, 1.7 mW cm(-2) UV light, the IZO-FET displays a photocurrent of 2 mA, and a darkness current of similar to 20 nA at an optimized gate voltage of -2 V. The device is effectively turned on in about 5 ms and off in 10 ms. These results suggest that the IZO-FET fabricated by inkjet printing could be a low cost highly sensitive UV photodetector.
Place, publisher, year, edition, pages
2011. Vol. 208, no 1, 206-209 p.
field effect transistors, In doping, inkjet printing, UV photodetectors, ZnO
IdentifiersURN: urn:nbn:se:kth:diva-32000DOI: 10.1002/pssa.201026264ISI: 000287295100034ScopusID: 2-s2.0-78651362437OAI: oai:DiVA.org:kth-32000DiVA: diva2:409236
QC 201104072011-04-072011-04-042011-04-07Bibliographically approved