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Robust Low Voltage Program-Erasable Cobalt-Nanocrystal Memory Capacitors with Multistacked Al2O3/HfO2/Al2O3 Tunnel Barrier
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2009 (English)In: Chinese Physics Letters, ISSN 0256-307X, E-ISSN 1741-3540, Vol. 26, no 8, 087303- p.Article in journal (Refereed) Published
Abstract [en]

An atomic-layer-deposited Al2O3/HfO2/Al2O3 (A/H/A) tunnel barrier is investigated for Co nanocrystal memory capacitors. Compared to a single Al2O3 tunnel barrier, the A/H/A barrier can significantly increase the hysteresis window, i. e., an increase by 9V for +/- 12V sweep range. This is attributed to a marked decrease in the energy barriers of charge injections for the A/H/A tunnel barrier. Further, the Co-nanocrystal memory capacitor with the A/H/A tunnel barrier exhibits a memory window as large as 4.1V for 100 mu s program/erase at a low voltage of +/- 7V, which is due to fast charge injection rates, i. e., about 2.4 x 10(16) cm(-2) s(-1) for electrons and 1.9 x 10(16) cm(-2) s(-1) for holes.

Place, publisher, year, edition, pages
2009. Vol. 26, no 8, 087303- p.
Keyword [en]
NONVOLATILE MEMORY, RETENTION
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-32342DOI: 10.1088/0256-307X/26/8/087303ISI: 000268662800087Scopus ID: 2-s2.0-68949209174OAI: oai:DiVA.org:kth-32342DiVA: diva2:410230
Note
QC 20110413Available from: 2011-04-13 Created: 2011-04-12 Last updated: 2017-12-11Bibliographically approved

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