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A Modified Charge-Pumping Method for the Characterization of Interface-Trap Generation in MOSFETs
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Material Physics.
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2009 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, Vol. 56, no 2, 267-274 p.Article in journal (Refereed) Published
Abstract [en]

A novel recovery-free interface-trap measurement method is presented in detail. This method is the modification of the conventional charge pumping (CP) by extending the pulse low level to the stress-bias and minimizing the pulse high-level duty cycle to suppress the recovery effect. The method is applied to study the negative-bias temperature instability in p-MOSFETs. As compared with the conventional CP, a much larger interface-trap generation under stress is observed by the new method. A power law time dependence (similar to t(n)) of interface-trap generation is observed. The index n. is less than that derived from conventional CP and increases with temperature, demonstrating a dispersive process involved in the trap generation dynamics.

Place, publisher, year, edition, pages
2009. Vol. 56, no 2, 267-274 p.
Keyword [en]
Charge pumping (CP), interface traps, MOSFETs, negative-bias temperature instability (NBTI), reaction-diffusion model
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-32456DOI: 10.1109/TED.2008.2010585ISI: 000262816800016Scopus ID: 2-s2.0-59849104501OAI: oai:DiVA.org:kth-32456DiVA: diva2:410702
Note
QC 20110414Available from: 2011-04-14 Created: 2011-04-14 Last updated: 2011-04-14Bibliographically approved

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