Toward 4H-SiC MISFETs Devices Based on ONO (SiO2-Si3N4-SiO2) Structures
2011 (English)In: Journal of the Electrochemical Society, ISSN 0013-4651, Vol. 5, no 158, 496-501 p.Article in journal (Refereed) Published
The electrical properties of metal-insulator-semiconductor (MIS) devices based on ONO (SiO2-Si3N4-SiO2) structures fabricatedon n-type 4H-SiC (0001) epilayers have been investigated. Three different combinations of low-pressure chemical vapordeposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD) and thermal oxidations (TO) in N2O and wet oxygenH2O:O2 were studied for the formation of the ONO stack. In addition, the inﬂuence of the thickness of SiO2and Si3N4 layers were considered and recommendations for optimal ONO structure are given. Oxide characterization tests and reliability investigations have been performed at room and high temperatures. This comparative study resulted in the development of ONO structuresdescribing low oxide/near interface/interface defects and high reliability of the devices even at high temperature.
Place, publisher, year, edition, pages
2011. Vol. 5, no 158, 496-501 p.
SIO2/4H-SIC INTERFACE, TEMPERATURE, MOBILITY, MOSFETS, OXIDE, OXIDATION
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-32471DOI: 10.1149/1.3556119ISI: 000288867700083ScopusID: 2-s2.0-79953165744OAI: oai:DiVA.org:kth-32471DiVA: diva2:410761
QC 201104142011-04-142011-04-142011-04-19Bibliographically approved