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3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide
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2011 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 679-680, 645-648 p.Article in journal (Refereed) Published
Abstract [en]

3C-SiC MOSFET with 200 cm2/Vs channel mobility was fabricated. High performance device processes were adopted, including room temperature implantation with resist mask, polysilicon-metal gates, aluminium interconnects with titanium and titanium nitride and a specially developed activation anneal at 1600°C in Ar to get a smooth 3C-SiC surface and hence the expected high channel mobility. CVD deposited oxide with post oxidation annealing was investigated to reduce unwanted oxide charges and hence to get a better gate oxide integrity compared to thermally grown oxides. 3C-SiC MOSFETs with 600 V blocking voltage and 10 A drain current were fabricated using the improved processes described above. The MOSFETs assembled with TO-220 PKG indicated specific on-resistances of 5 to 7 mΩcm2.

Place, publisher, year, edition, pages
2011. Vol. 679-680, 645-648 p.
Keyword [en]
3C-SiC, Capacitance-Voltage Characteristics, Channel Mobility, CVD Deposited Oxide, MOSFET, On Resistance, Post Oxidation Annealing, TZDB
National Category
Engineering and Technology
URN: urn:nbn:se:kth:diva-32497DOI: 10.4028/ 000291673500155OAI: diva2:410876
QC 20110415Available from: 2011-04-15 Created: 2011-04-15 Last updated: 2011-11-16Bibliographically approved
In thesis
1. Fabrication and Characterization of 3C- and4H-SiC MOSFETs
Open this publication in new window or tab >>Fabrication and Characterization of 3C- and4H-SiC MOSFETs
2011 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

During the last decades, a global effort has been started towards the implementation of energy efficient electronics. Silicon carbide (SiC), a wide band-gap semiconductor is one of the potential candidates to replace the widespread silicon (Si) which enabled and dominates today’s world of electronics. It has been demonstrated that devices based on SiC lead to a drastic reduction of energy losses in electronic systems. This will help to limit the global energy consumption and the introduction of renewable energy generation systems to a competitive price.

Active research has been dedicated to SiC since the 1980’s. As a result, a mature SiC growth technology has been developed and 4 inch SiC wafers are today commercially available. Research and development activities on the fabrication of SiC devices have also been carried out and resulted in the commercialization of SiC devices. In 2011, Schottky barrier diodes, bipolar junction transistors, and junction field effect transistors can be purchased from several electronic component manufacturers.

However, the device mostly used in electronics, the metal-oxide-semiconductor field effect transistor (MOSFET) is only recently commercially available in SiC. This delay is due to critical technology issues related to reliability and stability of the device, which still challenge many researchers all over the world.

This thesis summarizes the main challenges of the SiC MOSFET fabrication process. State of the art technology modules like the gate stack formation, the drain/source ohmic contact formation, and the passivation layer deposition are considered and contributions of this work to the development of these technology modules is reported.

The investigated technology modules are integrated into the complete fabrication process of vertical MOSFET devices. This MOSFET process was tested using cubic SiC (3C-SiC) and hexagonal SiC (4H-SiC) wafers and achieved results will be discussed.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2011. xviii, 97 p.
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2011:05
SiC, MOSFETs, Fabrication, Characterization
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
urn:nbn:se:kth:diva-32367 (URN)978-91-7415-913-4 (ISBN)
Public defence
2011-05-06, Sal C1, KTH-Electrum, Isafjordsgatan 22, Kista, 11:38 (English)
EU, FP7, Seventh Framework Programme, MRTN-CT-2006-035735
QC 20110415Available from: 2011-04-15 Created: 2011-04-13 Last updated: 2011-04-29Bibliographically approved

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Esteve, Romain
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