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Strong dependence of the magnetic anisotropy on the growth temperature of Fe3+xSi1-x (x=0.34) films on GaAs(113)A substrates
2009 (English)In: Journal of Magnetism and Magnetic Materials, ISSN 0304-8853, E-ISSN 1873-4766, Vol. 321, no 20, 3488-3492 p.Article in journal (Refereed) Published
Abstract [en]

A strong dependence of the magnetic anisotropy on the growth temperature of Fe3+xSi1-x Heusler alloy films on GaAs(113)A substrates is reported for a composition of 17.5 at:% Si (x = 0.34). This composition of Fe-Si alloy lies within the stable phase of the technologically promising Heusler alloy Fe3Si. The layers grown at the optimized growth temperature of 250 degrees C exhibit the expected four-fold magnetic anisotropy, which arises from the magnetocrystalline anisotropy and the large demagnetization energy, similar to Fe films. However, an unexpected strong uniaxial magnetic anisotropy is found for samples grown at 200 and 400 degrees C with the easy axes along < 33 (2) over bar > and <(1) over bar 10 >, respectively. The uniaxial magnetic anisotropy of these samples are shown to be related to the inferior interface quality.

Place, publisher, year, edition, pages
2009. Vol. 321, no 20, 3488-3492 p.
Keyword [en]
Magnetic anisotropy of thin films, Fe3Si Heusler alloy films, GaAs(113)A, Molecular-beam epitaxy
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-32510DOI: 10.1016/j.jmmm.2009.06.057ISI: 000268502300023OAI: oai:DiVA.org:kth-32510DiVA: diva2:410995
Note
QC 20110415Available from: 2011-04-15 Created: 2011-04-15 Last updated: 2017-12-11Bibliographically approved

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Muduli, Pranaba
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