Comparative Study of Losses in Ultrasharp Silicon-on-Insulator Nanowire Bends
2009 (English)In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 15, no 5, 1406-1412 p.Article in journal (Refereed) Published
Ultrasharp silicon-on-insulator (SOI) nanowire bends (with a bending radius of R < 2 mu m) are analyzed numerically. It is shown that the calculated bending losses for ultrasharp bends are overestimated when using a modal analysis method based on finite-difference method. In this case, reliable estimation of the bending loss can be made with a 3-D finite-difference time-domain (3-D-FDTD) method. By using 3-D-FDTD simulation, the losses in SOI nanowire bends with different structures and parameters are studied. By increasing the core width or height of the waveguide, one can reduce the bending loss at longer wavelengths for TE mode while the bending performance at shorter wavelengths degrades due to the multimode effect. Increasing the core height is much more effective to reduce the bending loss of TM mode than increasing core width. The relationship between the intrinsic Q-factor of a microring resonator and the bending radius is also obtained.
Place, publisher, year, edition, pages
2009. Vol. 15, no 5, 1406-1412 p.
Bending loss, finite-difference time domain (FDTD), nanowire, silicon-on-insulator (SOI), ultrasharp, waveguide
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-32683DOI: 10.1109/JSTQE.2009.2013360ISI: 000270950300017ScopusID: 2-s2.0-70350191663OAI: oai:DiVA.org:kth-32683DiVA: diva2:411452
QC 201104182011-04-182011-04-182013-11-19Bibliographically approved