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50 Gb/s hybrid silicon traveling-wave electroabsorption modulator
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
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2011 (English)In: Optics Express, ISSN 1094-4087, E-ISSN 1094-4087, Vol. 19, no 7, 5811-5816 p.Article in journal (Refereed) Published
Abstract [en]

We have demonstrated a traveling-wave electroabsorption modulator based on the hybrid silicon platform. For a device with a 100 mu m active segment, the small-signal electro/optical response renders a 3 dB bandwidth of around 42 GHz and its modulation efficiency reaches 23 GHz/V. A dynamic extinction ratio of 9.8 dB with a driving voltage swing of only 2 V was demonstrated at a transmission rate of 50 Gb/s. This represents a significant improvement for modulators compatible with integration of silicon-based photonic integrated circuits.

Place, publisher, year, edition, pages
2011. Vol. 19, no 7, 5811-5816 p.
Keyword [en]
PERFORMANCE, GUIDE, CHIRP
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-32607DOI: 10.1364/OE.19.005811ISI: 000288852700010Scopus ID: 2-s2.0-79953168098OAI: oai:DiVA.org:kth-32607DiVA: diva2:411795
Note
QC 20110419Available from: 2011-04-19 Created: 2011-04-18 Last updated: 2017-12-11Bibliographically approved

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Westergren, Urban

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