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Analysis of electric-field-induced spin splitting in wide modulation-doped quantum wells
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
2008 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 78, no 20, 205317- p.Article in journal (Refereed) Published
Abstract [en]

We analyze the proper inclusion of electric-field-induced spin splittings in the framework of the envelope function approximation. We argue that the Rashba effect should be included in the form of a macroscopic potential as diagonal terms in a multiband approach rather than the commonly used Rashba term dependent on k and electric field. It is pointed out that the expectation value of the electric field in a subband is sometimes not unique because the expectation values can even have opposite signs for the spin-split subband components. Symmetric quantum wells with Dresselhaus terms and the influence of the interfaces on the spin splitting are also discussed. We apply a well established multiband approach to wide modulation-doped InGaSb quantum wells with strong built-in electric fields in the interface regions. We demonstrate an efficient mechanism for switching on and off the Rashba splitting with an electric field being an order of magnitude smaller than the local built-in field that determines the Rashba splitting. The implications of our findings for spintronic devices, in particular the Datta-Das spin transistor and proposed modifications of it, are discussed.

Place, publisher, year, edition, pages
2008. Vol. 78, no 20, 205317- p.
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-33171DOI: 10.1103/PhysRevB.78.205317ISI: 000261215400056Scopus ID: 2-s2.0-57149134677OAI: oai:DiVA.org:kth-33171DiVA: diva2:413895
Note
QC 20110429Available from: 2011-04-29 Created: 2011-04-29 Last updated: 2017-12-11Bibliographically approved

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