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Interstitial Donor Codoping Method in (Ga, Mn)As to Increase Solubility of Mn and Curie Temperature
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Applied Material Physics.ORCID iD: 0000-0003-4341-5663
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2011 (English)In: APPL PHYS EXPRESS, ISSN 1882-0778, Vol. 4, no 4, 043003Article in journal (Refereed) Published
Abstract [en]

Based on first principles calculations, we propose a solubility control method of magnetic impurities in dilute magnetic semiconductors (DMSs). The low solubility of Mn in (Ga, Mn)As is experimentally and theoretically known. We show that donor atoms, such as Li, introduced at the interstitial sites in GaAs enhance the solubility of Mn. As a result, Mn can be doped to more than 20% in GaAs in the thermal equilibrium condition. The same effect can be seen when we dope Mn in GaAs with other interstitial donors, such as H, Na, K, Be, Mg, Ca, Cu, and Ag.

Place, publisher, year, edition, pages
The Japan Society of Applied Physics (JSAP) , 2011. Vol. 4, no 4, 043003
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Other Engineering and Technologies not elsewhere specified
URN: urn:nbn:se:kth:diva-33258DOI: 10.1143/APEX.4.043003ISI: 000289344800012ScopusID: 2-s2.0-79954447433OAI: diva2:414300
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QC 20110503

Available from: 2011-05-03 Created: 2011-05-02 Last updated: 2016-04-28Bibliographically approved

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Bergqvist, Lars
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