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ENHANCEMENT OF THE DEFECT FIELD OF ONE-DIMENSIONAL PHOTONIC CRYSTALS CONTAINING epsilon- AND mu-NEGATIVE LAYERS
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
2008 (English)In: Journal of Russian Laser Research, ISSN 1071-2836, E-ISSN 1573-8760, Vol. 29, no 5, 460-465 p.Article in journal (Refereed) Published
Abstract [en]

Employing the transfer matrix method, we study the electromagnetic field of one-dimensional photonic crystals with a defect inserted by pairs of mu-negative (MNG) and epsilon-negative (ENG) material layers. The fields within the pairs of layers and the matrix defect are independent of each other, and the whole field is their superposition. The whole defect field can be significantly enhanced by pairs of epsilon-negative and mu-negative layers. In contrast to the conventional defect modes, the intensity and volume of the defect field with pairs of epsilon-negative and mu-negative layers can be precisely adjusted.

Place, publisher, year, edition, pages
2008. Vol. 29, no 5, 460-465 p.
Keyword [en]
one-dimensional photonic crystals, epsilon-negative materials, mu-negative materials, defect field
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-33269DOI: 10.1007/s10946-008-9035-0ISI: 000261691700005Scopus ID: 2-s2.0-56749176929OAI: oai:DiVA.org:kth-33269DiVA: diva2:414483
Note

QC 20110503

Available from: 2011-05-03 Created: 2011-05-02 Last updated: 2017-12-11Bibliographically approved

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