Spin diode based on Fe/MgO double tunnel junction
2008 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 8, no 3, 805-809 p.Article in journal (Refereed) Published
We demonstrate a spin diode consisting of a semiconductor-free nanoscale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The observed magnetoresistance is a record high > 1000%, essentially making the structure an on/off spin switch. This, combined with the strong diode effect, similar to 100, demonstrates a new device principle, promising for memory and reprogrammable logic applications.
Place, publisher, year, edition, pages
2008. Vol. 8, no 3, 805-809 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-33382DOI: 10.1021/nl072676zISI: 000253947400007ScopusID: 2-s2.0-61449211124OAI: oai:DiVA.org:kth-33382DiVA: diva2:414923
QC 201105052011-05-052011-05-052012-03-13Bibliographically approved