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Stabilizing the defect-induced dilute magnetic semiconductors: Li-doping in GaN with Ga vacancies (vol 93, 57006, 2011)
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Applied Material Physics.
2011 (English)In: Europhysics letters, ISSN 0295-5075, E-ISSN 1286-4854, Vol. 94, no 1, 19901- p.Article in journal (Refereed) Published
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2011. Vol. 94, no 1, 19901- p.
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Physical Sciences
URN: urn:nbn:se:kth:diva-33236DOI: 10.1209/0295-5075/94/19901ISI: 000289622200030OAI: diva2:415729
QC 20110609Available from: 2011-05-09 Created: 2011-05-02 Last updated: 2011-05-09Bibliographically approved

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Ahuja, Rajeev
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