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Power Handling Analysis of High-Power W-Band All-Silicon MEMS Phase Shifters
KTH, School of Electrical Engineering (EES), Microsystem Technology.
KTH, School of Electrical Engineering (EES), Microsystem Technology.ORCID iD: 0000-0001-9552-4234
KTH, School of Electrical Engineering (EES), Microsystem Technology.
2011 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 58, no 5, 1548-1555 p.Article in journal (Refereed) Published
Abstract [en]

This paper analyzes the power handling capability and the thermal characteristics of an all-silicon dielectric-block microelectromechanical-system (MEMS) phase-shifter concept, which is the first MEMS phase-shifter type whose power handling is not limited by the MEMS structures but only by the transmission line itself and by the heat-sink capabilities of the substrate, which enables MEMS phase-shifter technology for future high-power high-reliability applications. The power handling measurements of this concept are performed up to 43 dBm (20W) at 3 GHz with an automatic gain-controlled setup, assisted by a large-signal network analyzer, and the temperature rises of the devices were measured with an infrared microscope camera. The measurement results are extended to 40 dBm at 75 GHz by calibrating electrothermal simulations with the measurements. A comparative study to conventional state-of-the-art MEMS phase-shifter concepts based on thin metallic bridges is carried out. The simulated results show that the all-silicon phase-shifter designs have the maximum temperature rise of only 30 degrees C for 40 dBm at 75 GHz, which is 10-20 times less than conventional MEMS phase shifters of the comparable RF performance.

Place, publisher, year, edition, pages
2011. Vol. 58, no 5, 1548-1555 p.
Keyword [en]
microwave, millimeter wave, phase shifter, radio-frequency microelectromechanical systems (RF MEMSs)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-33726DOI: 10.1109/TED.2011.2117429ISI: 000289952800037Scopus ID: 2-s2.0-79955544661OAI: oai:DiVA.org:kth-33726DiVA: diva2:417404
Note
QC 20110517Available from: 2011-05-17 Created: 2011-05-16 Last updated: 2017-12-11Bibliographically approved
In thesis
1. Novel RF MEMS Devices for W-Band Beam-Steering Front-Ends
Open this publication in new window or tab >>Novel RF MEMS Devices for W-Band Beam-Steering Front-Ends
2012 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

This thesis presents novel millimeter-wave microelectromechanical-systems (MEMS) components for W-band reconfigurable beam-steering front-ends. The proposed MEMS components are novel monocrystalline-silicon dielectric-block phase shifters, and substrate-integrated three-dimensional (3D) micromachined helical antennas designed for the nominal frequency of 75 GHz.

The novel monocrystalline-silicon dielectric-block phase shifters are comprised of multi-stages of a tailor-made monocrystalline-silicon block suspended on top of a 3D micromachined coplanar-waveguide transmission line. The relative phase-shift is obtained by vertically pulling the suspended monocrystalline-silicon block down with an electrostatic actuator, resulting in a phase difference between the up and downstate of the silicon block. The phase-shifter prototypes were successfully implemented on a high-resistivity silicon substrate using standard cleanroom fabrication processes. The RF and non-linearity measurements indicate that this novel phase-shifter design has an excellent figure of merit that offers the best RF performance reported to date in terms of loss/bit at the nominal frequency, and maximum return and insertion loss over the whole W-band, as compared to other state-of-the-art MEMS phase shifters. Moreover, this novel design offers high power handling capability and superior mechanical stability compared to the conventional MEMS phase-shifter designs, since no thin moving metallic membranes are employed in the MEMS structures. This feature allows MEMS phase-shifter technology to be utilized in high-power applications. Furthermore, the return loss of the dielectric-block phase shifter can be minimized by appropriately varying the individual distance between each phase-shifting stage.

This thesis also investigates 3D micromachined substrate-integrated W-band helical antennas. In contrast to conventional on-chip antenna designs that only utilize the surface of the wafer, the novel helical radiator is fully embedded into the substrate, thereby utilizing the whole volume of the wafer and resulting in a compact high-gain antenna design. The performance of the antenna is substantially enhanced by properly etching the substrate, tailor making the antenna core, and by modifying size and geometry of the substrate-integrated ground plane. A linear line antenna array is composed of eight radiating elements and is demonstrated by simulations. Each antenna is connected to the input port through a multi-stage 3-dB power divider. The input and output of the single-stage 3-dB power divider is well matched to the 50-Ω impedance by four-section Chebyshev transformers. The simulation results indicate that the novel helical antenna arrays offer a narrow radiation beam with an excellent radiation gain that result in high-resolution scan angles on the azimuth plane. The proposed helical antenna structures can be fabricated by employing standard cleanroom micromachining processes.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2012. xii, 84 p.
Series
Trita-EE, ISSN 1653-5146 ; 2012:011
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-93507 (URN)978-91-7501-296-4 (ISBN)
Public defence
2012-05-25, Q1, Osquldas väg 4, entréplan, KTH, Stockholm, 09:30 (English)
Opponent
Supervisors
Note
QC 20120427Available from: 2012-04-27 Created: 2012-04-19 Last updated: 2012-04-27Bibliographically approved

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