Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
2011 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 605, no 9-10, 883-888 p.Article in journal (Refereed) Published
Tin (Sn) induced (1 x 2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn-III dimers. Furthermore, a new Sn-induced (1 x 4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1 x 2) reconstruction, and it is shown that the (1 x 4) reconstruction is stabilized as the adatom size increases.
Place, publisher, year, edition, pages
2011. Vol. 605, no 9-10, 883-888 p.
Ab initio calculations, Scanning-tunneling microscopy, Synchrotron radiation photoelectron spectroscopy, Surface reconstruction, Gallium-arsenide (GaAs), Indium-arsenide (InAs), Single crystal surfaces
Other Engineering and Technologies not elsewhere specified
IdentifiersURN: urn:nbn:se:kth:diva-33689DOI: 10.1016/j.susc.2011.01.034ISI: 000290050600008ScopusID: 2-s2.0-79953278956OAI: oai:DiVA.org:kth-33689DiVA: diva2:418771
FunderSwedish Research Council
QC 201105242011-05-242011-05-162011-05-24Bibliographically approved