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Growth, coalescence, and electrical resistivity of thin Pt films grown by dc magnetron sputtering on SiO2
KTH, School of Electrical Engineering (EES), Microsystem Technology.ORCID iD: 0000-0001-9008-8402
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2008 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 254, no 22, 7356-7360 p.Article in journal (Refereed) Published
Abstract [en]

Ultra thin platinum films were grown by dc magnetron sputtering on thermally oxidized Si (100) substrates. The electrical resistance of the films was monitored in situ during growth. The coalescence thickness was determined for various growth temperatures and found to increase from 1.1 nm for films grown at room temperature to 3.3 nm for films grown at 400 degrees C. A continuous film was formed at a thickness of 2.9 nm at room temperature and 7.5 nm at 400 degrees C. The room temperature electrical resistivity decreases with increased growth temperature, while the in-plain grain size and the surface roughness, measured with a scanning tunneling microscope (STM), increase. Furthermore, the temperature dependence of the film electrical resistance was explored at various stages during growth.

Place, publisher, year, edition, pages
2008. Vol. 254, no 22, 7356-7360 p.
Keyword [en]
in situ resistivity, coalescence, thin film, magnetron sputtering, STM
National Category
Engineering and Technology
URN: urn:nbn:se:kth:diva-33083DOI: 10.1016/j.apsusc.2008.05.335ISI: 000258998700041ScopusID: 2-s2.0-50549103943OAI: diva2:418855
QC 20110524Available from: 2011-05-24 Created: 2011-04-28 Last updated: 2011-05-24Bibliographically approved

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Gylfason, Kristinn B.
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