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SiGe quantum well thermistor materials
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
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2008 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 517, no 1, 337-339 p.Article in journal (Refereed) Published
Abstract [en]

A novel monocrystalline high-performance thermistor material based on SiGe quantum well (QW) heterostructures is presented. A comparison between different growth temperatures for Si0.7Ge0.3 and Si growth is performed. Results illustrate a value of 2.3%/K for TCR with a low excess noise.

Place, publisher, year, edition, pages
2008. Vol. 517, no 1, 337-339 p.
Keyword [en]
Selective epitaxy growth, SiGe, Thermistor
National Category
Engineering and Technology
URN: urn:nbn:se:kth:diva-34298DOI: 10.1016/j.tsf.2008.08.164ISI: 000261510700097ScopusID: 2-s2.0-54949157825OAI: diva2:420488
QC 20110601Available from: 2011-06-01 Created: 2011-06-01 Last updated: 2011-06-01Bibliographically approved

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Radamson, Henry H.
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Microelectronics and Information Technology, IMIT
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