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Properties of self-assembled Bi nanolines on InAs(100) studied by core-level and valence-band photoemission, and first-principles calculations
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Applied Material Physics.
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2011 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 83, no 24, 245401- p.Article in journal (Refereed) Published
Abstract [en]

We have studied self-assembled bismuth (Bi) nanolines on the Bi-terminated InAs(100) surface by core-level and valence-band photoelectron spectroscopy, and ab initio first-principles calculations. A structural model for this intriguing surface is suggested based on the comparison of the measured and calculated core-level shifts. Also, the atomic origins for the core-level shifts are proposed based on the calculations. A clear peak related to this surface was observed in the valence band 0.34 eV below the Fermi level, which can be used as a "fingerprint" of a well-ordered Bi/InAs(100) nanoline surface.

Place, publisher, year, edition, pages
2011. Vol. 83, no 24, 245401- p.
Keyword [en]
Initio Moleccular-Dynamics, Total-Energy Calculations, Augmented-Wave Method, Silicon Nanowires, Asis-Set, Surfaces, Accumulation, Nanostructures, INSB(100), Metals
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-35114DOI: 10.1103/PhysRevB.83.245401ISI: 000291398500002ScopusID: 2-s2.0-79961240954OAI: diva2:425006
QC 20110620Available from: 2011-06-20 Created: 2011-06-20 Last updated: 2011-06-20Bibliographically approved

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