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Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
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2011 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 83, no 19, 195329- p.Article in journal (Refereed) Published
Abstract [en]

Previously found oxidized III-V semiconductor surfaces have been generally structurally disordered and useless for applications. We disclose a family of well-ordered oxidized InAs, InGaAs, InP, and InSb surfaces found by experiments. The found epitaxial oxide-III-V interface is insulating and free of defects related to the harmful Fermi-level pinning, which opens up new possibilities to develop long-sought III-V metal-oxide-semiconductor transistors. Calculations reveal that the early stages in the oxidation process include only O-III bonds due to the geometry of the III-V(100)c(8 x 2) substrate, which is responsible for the formation of the ordered interface. The found surfaces provide a different platform to study the oxidation and properties of oxides, e. g., the origins of the photoemission shifts and electronic structures, using surface science methods.

Place, publisher, year, edition, pages
2011. Vol. 83, no 19, 195329- p.
Keyword [en]
SCANNING-TUNNELING-MICROSCOPY, INITIO MOLECULAR-DYNAMICS, TOTAL-ENERGY CALCULATIONS, AUGMENTED-WAVE METHOD, COMPOUND SEMICONDUCTOR, BASIS-SET, SPECTROSCOPY, LAYERS, OXIDATION, METALS
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-34652DOI: 10.1103/PhysRevB.83.195329ISI: 000291089600017Scopus ID: 2-s2.0-79961122962OAI: oai:DiVA.org:kth-34652DiVA: diva2:427015
Funder
Swedish Research Council
Note

QC 20110627

Available from: 2011-06-27 Created: 2011-06-13 Last updated: 2017-12-11Bibliographically approved

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Vitos, Levente

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Punkkinen, Marko Patrick JohnJohansson, BörjeVitos, Levente
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