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Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering.
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2011 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 98, no 23, 231908-1-231908-3 p.Article in journal (Refereed) Published
Abstract [en]

Amorphous surface oxides of III-V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1x2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption.

Place, publisher, year, edition, pages
2011. Vol. 98, no 23, 231908-1-231908-3 p.
Keyword [en]
MOLECULAR-BEAM EPITAXY, PASSIVATION, GAAS, INTERFACE, GAAS(001), SILICON
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-35636DOI: 10.1063/1.3596702ISI: 000291658900022Scopus ID: 2-s2.0-79959343655OAI: oai:DiVA.org:kth-35636DiVA: diva2:429195
Note

QC 20110704

Available from: 2011-07-04 Created: 2011-07-04 Last updated: 2017-12-11Bibliographically approved

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