Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides
2011 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 98, no 23, 231908-1-231908-3 p.Article in journal (Refereed) Published
Amorphous surface oxides of III-V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1x2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption.
Place, publisher, year, edition, pages
2011. Vol. 98, no 23, 231908-1-231908-3 p.
MOLECULAR-BEAM EPITAXY, PASSIVATION, GAAS, INTERFACE, GAAS(001), SILICON
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-35636DOI: 10.1063/1.3596702ISI: 000291658900022ScopusID: 2-s2.0-79959343655OAI: oai:DiVA.org:kth-35636DiVA: diva2:429195
QC 201107042011-07-042011-07-042011-07-04Bibliographically approved