Measurements and simulations of lateral PNP transistors in a SiC NPN BJT technology for high temperature integrated circuits
2011 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 679-680, 758-761 p.Article in journal (Refereed) Published
In this work, a 4H-SiC lateral PNP transistor fabricated in a high voltage NPN technology has been simulated and characterized. The possibility of fabricating a lateral PNP with a current gain larger than 1 has been investigated. Device and circuit level solutions have been performed.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2011. Vol. 679-680, 758-761 p.
4H-SiC, NPN, lateral PNP, Sziklay configuration, SPICE model
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-35628DOI: 10.4028/www.scientific.net/MSF.679-680.758ISI: 000291673500183ScopusID: 2-s2.0-79955083743OAI: oai:DiVA.org:kth-35628DiVA: diva2:429430
8th European Conference on Silicon Carbide and Related Materials, Sundvolden Conf Ctr, Oslo, NORWAY, AUG 29-SEP 02, 2010
QC 201506242011-07-042011-07-042015-06-24Bibliographically approved