High Voltage, Low On-resistance 4H-SiC BJTs with Improved Junction Termination Extension
2011 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 679-680, 706-709 p.Article in journal (Refereed) Published
In this work, implantation-free 4H-SiC bipolar transistors with two-zone etched-JTE and improved surface passivation are fabricated. This design provides a stable open-base breakdown voltage of 2.8 kV which is about 75% of the parallel plane breakdown voltage. The small area devices shows a maximum dc current gain of 55 at Ic=0.33 A (J(C)=825 A/cm(2)) and V-CESAT = 1.05 V at Ic = 0.107 A that corresponds to a low ON-resistance of 4 m Omega.cm(2). The large area device shows a maximum dc current gain of 52 at Ic = 9.36 A (J(C)=312 A/cm(2)) and V-CESAT = 1.14 V at Ic = 5 A that corresponds to an ON-resistance of 6.8 m Omega.cm(2). Also these devices demonstrate a negative temperature coefficient of the current gain (beta=26 at 200 degrees C) and positive temperature coefficient of the ON-resistance (R-ON = 10.2 m Omega.cm(2)).
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2011. Vol. 679-680, 706-709 p.
Bipolar Junction Transistor (BJTs), power transistor, silicon carbide
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-35626DOI: 10.4028/www.scientific.net/MSF.679-680.706ISI: 000291673500170ScopusID: 2-s2.0-79955096804OAI: oai:DiVA.org:kth-35626DiVA: diva2:429451
8th European Conference on Silicon Carbide and Related Materials, Sundvolden Conf Ctr, Oslo, NORWAY, AUG 29-SEP 02, 2010
QC 201107042011-07-042011-07-042016-04-28Bibliographically approved