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High Voltage, Low On-resistance 4H-SiC BJTs with Improved Junction Termination Extension
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
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2011 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 679-680, 706-709 p.Article in journal (Refereed) Published
Abstract [en]

In this work, implantation-free 4H-SiC bipolar transistors with two-zone etched-JTE and improved surface passivation are fabricated. This design provides a stable open-base breakdown voltage of 2.8 kV which is about 75% of the parallel plane breakdown voltage. The small area devices shows a maximum dc current gain of 55 at Ic=0.33 A (J(C)=825 A/cm(2)) and V-CESAT = 1.05 V at Ic = 0.107 A that corresponds to a low ON-resistance of 4 m Omega.cm(2). The large area device shows a maximum dc current gain of 52 at Ic = 9.36 A (J(C)=312 A/cm(2)) and V-CESAT = 1.14 V at Ic = 5 A that corresponds to an ON-resistance of 6.8 m Omega.cm(2). Also these devices demonstrate a negative temperature coefficient of the current gain (beta=26 at 200 degrees C) and positive temperature coefficient of the ON-resistance (R-ON = 10.2 m Omega.cm(2)).

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2011. Vol. 679-680, 706-709 p.
Keyword [en]
Bipolar Junction Transistor (BJTs), power transistor, silicon carbide
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-35626DOI: 10.4028/www.scientific.net/MSF.679-680.706ISI: 000291673500170Scopus ID: 2-s2.0-79955096804OAI: oai:DiVA.org:kth-35626DiVA: diva2:429451
Conference
8th European Conference on Silicon Carbide and Related Materials, Sundvolden Conf Ctr, Oslo, NORWAY, AUG 29-SEP 02, 2010
Note

QC 20110704

Available from: 2011-07-04 Created: 2011-07-04 Last updated: 2017-12-11Bibliographically approved

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Zetterling, Carl-Mikael

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