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Performance tests of a 4, 1x4, 1mm(2) SiC LCVJFET for a DC/DC boost converter application
KTH, School of Electrical Engineering (EES), Electrical Machines and Power Electronics.ORCID iD: 0000-0001-7922-3407
KTH, School of Electrical Engineering (EES), Electrical Machines and Power Electronics.
KTH, School of Electrical Engineering (EES), Electrical Machines and Power Electronics.
KTH, School of Electrical Engineering (EES), Electrical Machines and Power Electronics.ORCID iD: 0000-0002-1755-1365
2011 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2010 / [ed] Monakhov EV; Hornos T; Svensson BG, 2011, Vol. 679-680, 722-725 p.Conference paper, Published paper (Refereed)
Abstract [en]

A 4.1x4.1mm(2), 100m Omega 1,2kV lateral channel vertical junction field effect transistor (LCVJFET) built in silicon carbide (SiC) from SiCED, to use as the active switch component in a high-temperature operation DC/DC-boost converter, has been investigated. The switching loss for room temperature (RT) and on-state resistance (Ron) for RT up to 170 degrees C is investigated. Since the SiC VJFET has a buried body diode it is also ideal to use instead of a switch and diode setup. The voltage drop over the body diode decreases slightly with a higher temperature. A short-circuit test has also been conducted, which shows a high ruggedness.

Place, publisher, year, edition, pages
2011. Vol. 679-680, 722-725 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 679-680
Keyword [en]
SIC, JFET, VJFET, Normally-on, switching losses
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-35627DOI: 10.4028/www.scientific.net/MSF.679-680.722ISI: 000291673500174Scopus ID: 2-s2.0-84953385783OAI: oai:DiVA.org:kth-35627DiVA: diva2:429459
Conference
8th European Conference on Silicon Carbide and Related Materials, Sundvolden Conf Ctr, Oslo, NORWAY, AUG 29-SEP 02, 2010
Note
QC 20110704Available from: 2011-07-04 Created: 2011-07-04 Last updated: 2015-05-29Bibliographically approved
In thesis
1. High-Efficiency SiC Power Conversion: Base Drivers for Bipolar Junction Transistors and Performance Impacts on Series-Resonant Converters
Open this publication in new window or tab >>High-Efficiency SiC Power Conversion: Base Drivers for Bipolar Junction Transistors and Performance Impacts on Series-Resonant Converters
2015 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

This thesis aims to bring an understanding to the silicon carbide (SiC) bipolar junction transistor (BJT). SiC power devices are superior to the silicon IGBT in several ways. They are for instance, able to operate with higher efficiency, at higher frequencies, and at higher junction temperatures. From a system point of view the SiC power device could decrease the cost and complexity of cooling, reduce the size and weight of the system, and enable the system to endure harsher environments.

The three main SiC power device designs are discussed with a focus on the BJT. The SiC BJT is compared to the SiC junction field-effect transistor (JFET) and the metal-oxide semiconductor field-effect transistor (MOSFET). The potential of employing SiC power devices in applications, ranging from induction heating to high-voltage direct current (HVDC), is presented.

The theory behind the state-of-the-art dual-source (2SRC) base driver that was presented by Rabkowski et al. a few years ago is described. This concept of proportional base drivers is introduced with a focus on the discretized proportional base drivers (DPBD). By implementing the DPBD concept and building a prototype it is shown that the steady-state consumption of the base driver can be reduced considerably.

 The aspects of the reverse conduction of the SiC BJT are presented. It is shown to be of importance to consider the reduced voltage drop over the base-emitter junction.

Last the impact of SiC unipolar and bipolar devices in series-resonant (SLR) converters is presented. Two full-bridges are designed and constructed, one with SiC MOSFETs utilizing the body diode for reverse conduction during the dead-time, and the second with SiC BJTs with anti-parallel SiC Schottky diodes. It is found that the SiC power devices, with their absence of tail current, are ideal devices to fully utilize the soft-switching properties that the SLR converters offer. The SiC MOSFET benefits from its possibility to utilize reverse conduction with a low voltage drop. It is also found that the size of capacitance of the snubbers can be reduced compare to state-of-the-art silicon technology. High switching frequencies of 200 kHz are possible while still keeping the losses low. A dead-time control strategy for each device is presented. The dual control (DuC) algorithm is tested with the SiC devices and compared to frequency modulation (FM).

The analytical investigations presented in this thesis are confirmed by experimental results on several laboratory prototype converters.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2015. xiv, 71 p.
Series
TRITA-EE, ISSN 1653-5146 ; 2015:024
Keyword
Silicon Carbide, Bipolar Junction Transistor (BJT), Resonant converter, Series-resonant converter (SLR), Base drive circuits, High- Efficiency Converters, High-Frequency Converters
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering
Identifiers
urn:nbn:se:kth:diva-168163 (URN)978-91-7595-601-5 (ISBN)
Public defence
2015-06-12, H1, Teknikringen 33, KTH, Stockholm, 09:45 (English)
Opponent
Supervisors
Note

QC 20150529

Available from: 2015-05-29 Created: 2015-05-27 Last updated: 2015-05-29Bibliographically approved

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Tolstoy, GeorgNee, Hans-Peter

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