Performance tests of a 4, 1x4, 1mm(2) SiC LCVJFET for a DC/DC boost converter application
2011 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2010 / [ed] Monakhov EV; Hornos T; Svensson BG, 2011, Vol. 679-680, 722-725 p.Conference paper (Refereed)
A 4.1x4.1mm(2), 100m Omega 1,2kV lateral channel vertical junction field effect transistor (LCVJFET) built in silicon carbide (SiC) from SiCED, to use as the active switch component in a high-temperature operation DC/DC-boost converter, has been investigated. The switching loss for room temperature (RT) and on-state resistance (Ron) for RT up to 170 degrees C is investigated. Since the SiC VJFET has a buried body diode it is also ideal to use instead of a switch and diode setup. The voltage drop over the body diode decreases slightly with a higher temperature. A short-circuit test has also been conducted, which shows a high ruggedness.
Place, publisher, year, edition, pages
2011. Vol. 679-680, 722-725 p.
, Materials Science Forum, ISSN 0255-5476 ; 679-680
SIC, JFET, VJFET, Normally-on, switching losses
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-35627DOI: 10.4028/www.scientific.net/MSF.679-680.722ISI: 000291673500174ScopusID: 2-s2.0-84953385783OAI: oai:DiVA.org:kth-35627DiVA: diva2:429459
8th European Conference on Silicon Carbide and Related Materials, Sundvolden Conf Ctr, Oslo, NORWAY, AUG 29-SEP 02, 2010
QC 201107042011-07-042011-07-042015-05-29Bibliographically approved