Current Gain Degradation in 4H-SiC Power BJTs
2011 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 679-680, 702-705 p.Article in journal (Refereed) Published
SiC airs are very attractive for high power application, but long term stability is still problematic and it could prohibit commercial production of these devices. The aim of this paper is to investigate the current gain degradation in BJTs with no significant degradation of the on-resistance. Electrical measurements and simulations have been used to characterize the behavior of the BJT during the stress test. Current gain degradation occurs, the gain drops from 58 before stress to 43 after 40 hours, and, moreover, the knee current shows fluctuations in its value during the first 20 hours. Current gain degradation has been attributed to increased interface traps or reduced lifetime in the base-emitter region or small stacking faults in the base-emitter region, while fluctuations of the knee current might be due to stacking faults in the collector region.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2011. Vol. 679-680, 702-705 p.
bipolar transistor, current gain degradation, interface traps, lifetime, stacking fault
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-35625DOI: 10.4028/www.scientific.net/MSF.679-680.702ISI: 000291673500169ScopusID: 2-s2.0-84953395323OAI: oai:DiVA.org:kth-35625DiVA: diva2:429469
8th European Conference on Silicon Carbide and Related Materials, Sundvolden Conf Ctr, Oslo, NORWAY, AUG 29-SEP 02, 2010
QC 201507212011-07-042011-07-042015-07-21Bibliographically approved