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On Different Process Schemes for MOSFETs With a Controllable NiSi-Based Metallic Source/Drain
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai .
State Key Lab of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai .
Department of Physics, Chemistry and Biology, Linköping University.
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2011 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 58, no 7, 1898-1906 p.Article in journal (Refereed) Published
Abstract [en]

This paper focuses on different silicidation schemes toward a controllable NiSi-based metallic source/drain (MSD) process with restricted lateral encroachment of NiSi. These schemes include thickness control of Ni, Ni-Pt alloying, and two-step annealing. Experimental results show that all the three process schemes can give rise to effective control of lateral encroachment during Ni silicidation. By controlling t(Ni), NiSi-based MSD metal-oxide-semiconductor field-effect transistors (MOSFETs) of gate length L-G = 55 nm are readily realized on ultrathin-body silicon-on-insulator substrates with 20-nm surface Si thickness. With the aid of dopant segregation (DS) to modifying the Schottky barrier heights of NiSi, both n- and p-type MSD MOSFETs show significant performance improvement, compared to reference devices without DS.

Place, publisher, year, edition, pages
2011. Vol. 58, no 7, 1898-1906 p.
Keyword [en]
Contacts, MOSFETs, silicides
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-36241DOI: 10.1109/TED.2011.2145381ISI: 000291952900011Scopus ID: 2-s2.0-79959519365OAI: oai:DiVA.org:kth-36241DiVA: diva2:430593
Note
QC 20120329Available from: 2011-07-11 Created: 2011-07-11 Last updated: 2017-12-11Bibliographically approved

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