On Different Process Schemes for MOSFETs With a Controllable NiSi-Based Metallic Source/Drain
2011 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, Vol. 58, no 7, 1898-1906 p.Article in journal (Refereed) Published
This paper focuses on different silicidation schemes toward a controllable NiSi-based metallic source/drain (MSD) process with restricted lateral encroachment of NiSi. These schemes include thickness control of Ni, Ni-Pt alloying, and two-step annealing. Experimental results show that all the three process schemes can give rise to effective control of lateral encroachment during Ni silicidation. By controlling t(Ni), NiSi-based MSD metal-oxide-semiconductor field-effect transistors (MOSFETs) of gate length L-G = 55 nm are readily realized on ultrathin-body silicon-on-insulator substrates with 20-nm surface Si thickness. With the aid of dopant segregation (DS) to modifying the Schottky barrier heights of NiSi, both n- and p-type MSD MOSFETs show significant performance improvement, compared to reference devices without DS.
Place, publisher, year, edition, pages
2011. Vol. 58, no 7, 1898-1906 p.
Contacts, MOSFETs, silicides
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-36241DOI: 10.1109/TED.2011.2145381ISI: 000291952900011ScopusID: 2-s2.0-79959519365OAI: oai:DiVA.org:kth-36241DiVA: diva2:430593
QC 201203292011-07-112011-07-112012-03-29Bibliographically approved