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High current-induced degradation of AlGaN ultraviolet light emitting diodes
KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Optics.
KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Optics.ORCID iD: 0000-0002-4606-4865
2011 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 109, no 10, 103108- p.Article in journal (Refereed) Published
Abstract [en]

Degradation under high current stress of AlGaN quantum well based light emitting diodes emitting at 285 and 310 nm has been studied using electroluminescence, time-resolved photoluminescence and current-voltage experimental techniques. The measurements have revealed that during aging decrease of the emission intensity is accompanied by increase of the tunneling current, increase of the nitrogen vacancy concentration and partial compensation of the p-doping. The main role in the device degradation has been ascribed to formation of tunneling conductivity channels, probably, via activation of the closed core screw dislocations with the help of nitrogen vacancies. Carrier lifetimes in the quantum wells and the p-cladding were found to be unaffected by the aging process, suggesting that the nonradiative recombination has a lesser influence on the device degradation.

Place, publisher, year, edition, pages
2011. Vol. 109, no 10, 103108- p.
Keyword [en]
GAN, NM, DISLOCATIONS, RELIABILITY, MECHANISMS, EMISSION, GROWTH, LEDS
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-36236DOI: 10.1063/1.3590149ISI: 000292115900033Scopus ID: 2-s2.0-79958820030OAI: oai:DiVA.org:kth-36236DiVA: diva2:430627
Note
QC 20110711Available from: 2011-07-11 Created: 2011-07-11 Last updated: 2017-12-11Bibliographically approved
In thesis
1. Optical properties and degradation of deep ultraviolet AIGaN-based light-emitting diodes
Open this publication in new window or tab >>Optical properties and degradation of deep ultraviolet AIGaN-based light-emitting diodes
2011 (English)Doctoral thesis, comprehensive summary (Other academic)
Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2011. 98 p.
Series
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2011:12
Keyword
AIGaN, deep-UV LEDs, polarization fields, screening, exciton binding energy, alloy fluctuations, near-field microscopy, carrier dynamics, LED aging
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-37917 (URN)978-91-7501-065-6 (ISBN)
Public defence
2011-09-20, Sal / Hall C1, Electrum,, Isafjordsgatan 26, Kista, 13:00 (English)
Opponent
Supervisors
Note
QC 20110831Available from: 2011-08-31 Created: 2011-08-19 Last updated: 2012-02-23Bibliographically approved

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Marcinkevicius, Saulius

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