Impact of dry-etching induced damage in InP-based photonic crystals
2008 (English)In: PHOTONIC CRYSTAL MATERIALS AND DEVICES VIII, 2008, Vol. 6989, U9890-U9890 p.Conference paper (Refereed)
In this work variations of the carrier lifetime in a GaInAsP/InP quantum well in two-dimensional PhC structures etched by Ar/Cl-2 chemically assisted ion beam etching as a function of the processing parameters is investigated. It is shown that the deposition conditions of the SiO2 mask material and its coverage as well as other process steps such as annealing affect the carrier lifetimes. However the impact of patterning the semiconductor on the carrier lifetime is dominant, showing over an order of magnitude reduction. For given PhC lattice parameters, the sidewall damage is shown to be directly related to the measured carrier lifetimes. A simple qualitative model based on sputtering theory and assuming a conical hole-shape development during etching is used to explain the experimental results.
Place, publisher, year, edition, pages
2008. Vol. 6989, U9890-U9890 p.
, Proceedings of SPIE, ISSN 0277-786X ; 6989
dry-etching, damage, InP, silicon dioxide, quantum well photoluminescence, chemically assisted ion beam etching, sputtering, photonic crystal
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-36698DOI: 10.1117/12.781231ISI: 000257885400021ScopusID: 2-s2.0-45149085492OAI: oai:DiVA.org:kth-36698DiVA: diva2:431013
QC 201107142011-07-142011-07-132013-11-19Bibliographically approved