Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Impact of dry-etching induced damage in InP-based photonic crystals
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-4606-4865
Show others and affiliations
2008 (English)In: PHOTONIC CRYSTAL MATERIALS AND DEVICES VIII, 2008, Vol. 6989, U9890-U9890 p.Conference paper, Published paper (Refereed)
Abstract [en]

In this work variations of the carrier lifetime in a GaInAsP/InP quantum well in two-dimensional PhC structures etched by Ar/Cl-2 chemically assisted ion beam etching as a function of the processing parameters is investigated. It is shown that the deposition conditions of the SiO2 mask material and its coverage as well as other process steps such as annealing affect the carrier lifetimes. However the impact of patterning the semiconductor on the carrier lifetime is dominant, showing over an order of magnitude reduction. For given PhC lattice parameters, the sidewall damage is shown to be directly related to the measured carrier lifetimes. A simple qualitative model based on sputtering theory and assuming a conical hole-shape development during etching is used to explain the experimental results.

Place, publisher, year, edition, pages
2008. Vol. 6989, U9890-U9890 p.
Series
Proceedings of SPIE, ISSN 0277-786X ; 6989
Keyword [en]
dry-etching, damage, InP, silicon dioxide, quantum well photoluminescence, chemically assisted ion beam etching, sputtering, photonic crystal
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-36698DOI: 10.1117/12.781231ISI: 000257885400021Scopus ID: 2-s2.0-45149085492OAI: oai:DiVA.org:kth-36698DiVA: diva2:431013
Note
QC 20110714Available from: 2011-07-14 Created: 2011-07-13 Last updated: 2013-11-19Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

Marcinkevicius, SauliusHe, Sailing

Search in DiVA

By author/editor
Berrier, AudreyShi, YaochengSiegert, JörgMarcinkevicius, SauliusHe, SailingSrinivasan, Anand
By organisation
Microelectronics and Applied Physics, MAPElectromagnetic EngineeringSemiconductor Materials, HMA
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 69 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf