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Mobility Extraction for Nanotube TFTs
KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK.
KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK. KTH, School of Information and Communication Technology (ICT), Electronic Systems.
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2011 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 32, no 7, 913-915 p.Article in journal (Refereed) Published
Abstract [en]

An extensive investigation of carrier mobility is presented for thin-film transistors (TFTs) with single-walled carbon nanotube (SWCNT) networks as the semiconductor channel. For TFTs particularly with low-density SWCNTs in the networks, the extracted mobility using the standard method for Si metal-oxide-semiconductor field-effect transistors is erroneous, mainly resulting from use of a parallel-plate capacitor model and assumption of the source-drain current being inversely proportional to the channel length. Large hysteresis in the transfer characteristics further complicates the extraction. By properly addressing all these challenges in this letter, a comprehensive methodology is established, leading to the extraction of mobility values that are independent of geometrical parameters.

Place, publisher, year, edition, pages
2011. Vol. 32, no 7, 913-915 p.
National Category
Mechanical Engineering
Identifiers
URN: urn:nbn:se:kth:diva-36866DOI: 10.1109/LED.2011.2149494ISI: 000292165200027Scopus ID: 2-s2.0-79959775199OAI: oai:DiVA.org:kth-36866DiVA: diva2:431298
Note
QC 20110719Available from: 2011-07-19 Created: 2011-07-18 Last updated: 2017-12-08Bibliographically approved

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Liu, ZhiyingQiu, ZhijunZheng, Li-Rong
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