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Metal-insulator transition and superconductivity in boron-doped diamond
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2007 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 75, no 16, 165313- p.Article in journal (Refereed) Published
Abstract [en]

We report on a detailed analysis of the transport properties and superconducting critical temperatures of boron-doped diamond films grown along the {100} direction. The system presents a metal-insulator transition (MIT) for a boron concentration (n(B)) on the order of n(c)similar to 4.5x10(20) cm(-3), in excellent agreement with numerical calculations. The temperature dependence of the conductivity and Hall effect can be well described by variable range hopping for n(B)< n(c) with a characteristic hopping temperature T-0 strongly reduced due to the proximity of the MIT. All metallic samples (i.e., for n(B)>n(c)) present a superconducting transition at low temperature. The zero-temperature conductivity sigma(0) deduced from fits to the data above the critical temperature (T-c) using a classical quantum interference formula scales as sigma(0)proportional to(n(B)/n(c)-1)(nu) with nu similar to 1. Large T-c values (>= 0.4 K) have been obtained for boron concentration down to n(B)/n(c)similar to 1.1 and T-c surprisingly mimics a (n(B)/n(c)-1)(1/2) law. Those high T-c values can be explained by a slow decrease of the electron-phonon coupling parameter lambda and a corresponding drop of the Coulomb pseudopotential mu(*) as n(B)-> n(c).

Place, publisher, year, edition, pages
2007. Vol. 75, no 16, 165313- p.
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Physical Sciences
URN: urn:nbn:se:kth:diva-37052DOI: 10.1103/PhysRevB.75.165313ISI: 000246075900047ScopusID: 2-s2.0-34247343361OAI: diva2:431917
Available from: 2011-07-27 Created: 2011-07-27 Last updated: 2011-07-27Bibliographically approved

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