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Surface resonance on the (6 root 3 x 6 root 3)-R30 degrees-reconstructed 5 ML Au on (root 3 x root 3)-R30 degrees-4H-SiC(0001)
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
2007 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 601, no 12, 2508-2511 p.Article in journal (Refereed) Published
Abstract [en]

In this paper we present evidence for a surface resonance on the (6v root 3 x 6 root 3)-R30 degrees-reconstruction obtained on 5 monolayers (ML) of An deposited on the (root 3 x root 3)-R30 degrees-4H-SiC(0001) and subsequently annealed. We use synchrotron radiation-based angle resolved photoelectron spectroscopy to show that this resonance has no k(parallel to)-dispersion, but a parabolic-like kil-dispersion of 0.4 eV around Gamma. Its electronic localization in the (6 root 3- x 6 root 3-)-R30 degrees surface reconstruction is documented by comparison with the (2 root 3- x 2 root 3-)-R30 degrees structure, obtained at a slightly lower annealing temperature after 5 ML Au deposition on the (root 3- x root 3)-R30 degrees-4H-SiC(0001) substrate.

Place, publisher, year, edition, pages
2007. Vol. 601, no 12, 2508-2511 p.
Keyword [en]
gold, silicon carbide, surface electronic phenomena, surface resonance, surface structure, synchrotron radiation angle resolved photoelectron spectroscopy, low energy electron diffraction (LEED)
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-37204DOI: 10.1016/j.susc.2007.04.078ISI: 000248029800017Scopus ID: 2-s2.0-34249979525OAI: oai:DiVA.org:kth-37204DiVA: diva2:432566
Available from: 2011-08-04 Created: 2011-08-04 Last updated: 2017-12-08Bibliographically approved

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