Change search
ReferencesLink to record
Permanent link

Direct link
A high-resolution core-level photoemission study of the Au/4H-SiC(0001)-(root 3 x root 3) interface
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
2007 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 19, no 26, 266006- p.Article in journal (Refereed) Published
Abstract [en]

We present a systematic study of different reconstructions obtained after deposition of Au on the (root 3 x root 3)- R30 degrees- 4H- SiC( 0001) surface. For 1-2 monolayers ( ML) Au and annealing temperature T-anneal similar to 675 degrees C, a 3 x 3 reconstruction was observed. For 4 ML Au and T-anneal similar to 650 degrees C, a ( 2 root 3 x 2 root 3)- R30 degrees. reconstruction appeared, while 5ML Au annealed at 700 degrees C reconstructed to give a ( 6 root 3 x 6 root 3)- R30 degrees. pattern. From the Si 2p and Au 4f core- level components, we propose interface models, depending on the amount of Au on the surface and the annealing temperature. For 1 - 4 ML Au annealed at 650 - 675 degrees C, gold diffuses under the topmost Si into the SiC and forms a silicide. An additional Si component in our Si 2p spectra is related to the interface between the silicide and SiC. For 5 ML Au annealed at 700 degrees C, silicide is also formed at the surface, covering unreacted Au on top of the SiC substrate. The interface Si component is also observed in the Si 2p spectra of this surface. The key role in Au/root 3- 4H- SiC( 0001) interface formation is played by diffusion and the silicon- richness of the surface.

Place, publisher, year, edition, pages
2007. Vol. 19, no 26, 266006- p.
National Category
Physical Sciences
URN: urn:nbn:se:kth:diva-37205DOI: 10.1088/0953-8984/19/26/266006ISI: 000247400700006ScopusID: 2-s2.0-34250788712OAI: diva2:432571
Available from: 2011-08-04 Created: 2011-08-04 Last updated: 2011-08-04Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Stoltz, Dunja
By organisation
Microelectronics and Applied Physics, MAP
In the same journal
Journal of Physics: Condensed Matter
Physical Sciences

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 16 hits
ReferencesLink to record
Permanent link

Direct link