Equilibrium analysis of zirconium carbide CVD growth
2007 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 307, no 2, 302-308 p.Article in journal (Refereed) Published
A chemical equilibrium study was performed to investigate the effect of growth parameters on the constitution in ZrC films grown by chemical vapor deposition (CVD). The equilibrium analysis of the Zr-C-H system demonstrated that ZrC (fec) deposition is favorable and that a certain minimum amount of hydrogen should prevent co-deposition of elemental carbon over a wide range of temperature, pressure, and inlet C/Zr atom ratio. The results of the equilibrium analysis were compared to the phase constitution of films grown by low-pressure metalorganic CVD (< 10(-4) Torr). Only carbon-rich ZrC films were grown and demonstrated the possibility of an aerosolassisted CVD approach to stoichiometric ZrC film growth.
Place, publisher, year, edition, pages
2007. Vol. 307, no 2, 302-308 p.
phase equilibria, equilibrium analysis, metalorganic chemical vapor deposition, zirconium carbide
IdentifiersURN: urn:nbn:se:kth:diva-37304DOI: 10.1016/j.jcrysgro.2007.05.039ISI: 000250245900009ScopusID: 2-s2.0-34548415469OAI: oai:DiVA.org:kth-37304DiVA: diva2:432997