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Equilibrium analysis of zirconium carbide CVD growth
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2007 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 307, no 2, p. 302-308Article in journal (Refereed) Published
Abstract [en]

A chemical equilibrium study was performed to investigate the effect of growth parameters on the constitution in ZrC films grown by chemical vapor deposition (CVD). The equilibrium analysis of the Zr-C-H system demonstrated that ZrC (fec) deposition is favorable and that a certain minimum amount of hydrogen should prevent co-deposition of elemental carbon over a wide range of temperature, pressure, and inlet C/Zr atom ratio. The results of the equilibrium analysis were compared to the phase constitution of films grown by low-pressure metalorganic CVD (< 10(-4) Torr). Only carbon-rich ZrC films were grown and demonstrated the possibility of an aerosolassisted CVD approach to stoichiometric ZrC film growth.

Place, publisher, year, edition, pages
2007. Vol. 307, no 2, p. 302-308
Keyword [en]
phase equilibria, equilibrium analysis, metalorganic chemical vapor deposition, zirconium carbide
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-37304DOI: 10.1016/j.jcrysgro.2007.05.039ISI: 000250245900009Scopus ID: 2-s2.0-34548415469OAI: oai:DiVA.org:kth-37304DiVA, id: diva2:432997
Available from: 2011-08-08 Created: 2011-08-08 Last updated: 2017-12-08Bibliographically approved

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