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X-ray irradiation of silicon detectors
KTH, School of Engineering Sciences (SCI), Physics.
2006 (English)In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, ISSN 0168-9002, E-ISSN 1872-9576, Vol. 566, no 2, 722-726 p.Article in journal (Refereed) Published
Abstract [en]

Silicon pad detectors were irradiated with a 30 kVp X-ray energy spectrum and the change in capacity and dark current was measured as a function of radiation dose and restoring time. After irradiation of the detectors the parameters were monitored and the time to get back to the baseline before irradiation was measured. The relaxation process of the detector functionality (the recovery of the characteristics) was observed with bias voltage applied to the detectors.

Place, publisher, year, edition, pages
2006. Vol. 566, no 2, 722-726 p.
Keyword [en]
X-ray, silicon, detector, radiation hardness, voltage training
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-37471DOI: 10.1016/j.nima.2006.07.057ISI: 000241307400060Scopus ID: 2-s2.0-33748758711OAI: oai:DiVA.org:kth-37471DiVA: diva2:433974
Available from: 2011-08-12 Created: 2011-08-12 Last updated: 2017-12-08Bibliographically approved

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