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Electroabsorption modulator using intersubband transitions in GaN-AlGaN-AlN step quantum wells
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
2006 (English)In: IEEE Journal of Quantum Electronics, ISSN 0018-9197, Vol. 42, no 7-8, 810-819 p.Article in journal (Refereed) Published
Abstract [en]

We calculate the high-speed modulation properties of an electroabsorption modulator for lambda = 1.55 mu m based on Stark shifting an intersubband resonance in GaN-AlGaN-AlN step quantum wells. In a realistic simulation assuming an absorption linewidth Gamma = 100 meV we obtain an RC-limited electrical f(3dB) similar to 60 GHz at an applied voltage swing V-pp = 2.8 V. We also show that a small negative effective chirp parameter suitable for standard single-mode fiber is obtained and that the absorption is virtually unsaturable. The waveguide is proposed to be based on the plasma effect in order to simultaneously achieve a strong confinement of the optical mode, a low series resistance, and lattice-matched cladding and core waveguide layers. Extrapolated results reflecting the decisive dependence of the high-speed performance on the intersubband absorption linewidth Gamma are also given. At the assumed linewidth the modulation speed versus signal power ratio is on a par with existing lumped interband modulators based on the quantum confined Stark effect.

Place, publisher, year, edition, pages
2006. Vol. 42, no 7-8, 810-819 p.
Keyword [en]
III-N materials, intersubband transitions, optical modulators, plasma effect, quantum wells, Stark effect
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-37590DOI: 10.1109/JQE.2006.877297ISI: 000239404700026ScopusID: 2-s2.0-33947305236OAI: diva2:434352
Available from: 2011-08-15 Created: 2011-08-15 Last updated: 2011-08-15Bibliographically approved

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Holmström, Petter
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