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Formation of a buried collector layer in RF-bipolar devices by ion implantation
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
2006 (English)In: MICROELECTRONICS JOURNAL, ISSN 0026-2692, Vol. 37, no 11, 1366-1371 p.Article in journal (Refereed) Published
Abstract [en]

High-dose implantation of arsenic (As) buried collector layer formation for bipolar/BiCMOS processes has been studied. Wafers with and without screen oxide were subjected to high-dose implants with different energies. Some wafers were given a low-temperature anneal before XTEM and SIMS analyses. Defects observed after As implants of 6E15 cm(-2) through screen oxide after low-temperature anneal were annihilated at the subsequent high-temperature steps, but the direct implant of As into the silicon is preferred since fewer defects are generated and there is no knock-on of oxygen into the material. Fabricated devices showed excellent electrical performance. However, the upper limit (dose and/or energy) at which perfect recrystallization does no longer occur has not been defined and the process limit is consequently not established.

Place, publisher, year, edition, pages
2006. Vol. 37, no 11, 1366-1371 p.
Keyword [en]
bipolar, BiCMOS, collector, implant, XTEM, SIMS
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-37717DOI: 10.1016/j.mejo.2006.06.009ISI: 000242785900035Scopus ID: 2-s2.0-33750613464OAI: oai:DiVA.org:kth-37717DiVA: diva2:435164
Note
QC 20110817Available from: 2011-08-17 Created: 2011-08-16 Last updated: 2012-03-20Bibliographically approved

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