Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Formation of a buried collector layer in RF-bipolar devices by ion implantation
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
2006 (English)In: MICROELECTRONICS JOURNAL, ISSN 0026-2692, Vol. 37, no 11, p. 1366-1371Article in journal (Refereed) Published
Abstract [en]

High-dose implantation of arsenic (As) buried collector layer formation for bipolar/BiCMOS processes has been studied. Wafers with and without screen oxide were subjected to high-dose implants with different energies. Some wafers were given a low-temperature anneal before XTEM and SIMS analyses. Defects observed after As implants of 6E15 cm(-2) through screen oxide after low-temperature anneal were annihilated at the subsequent high-temperature steps, but the direct implant of As into the silicon is preferred since fewer defects are generated and there is no knock-on of oxygen into the material. Fabricated devices showed excellent electrical performance. However, the upper limit (dose and/or energy) at which perfect recrystallization does no longer occur has not been defined and the process limit is consequently not established.

Place, publisher, year, edition, pages
2006. Vol. 37, no 11, p. 1366-1371
Keyword [en]
bipolar, BiCMOS, collector, implant, XTEM, SIMS
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-37717DOI: 10.1016/j.mejo.2006.06.009ISI: 000242785900035Scopus ID: 2-s2.0-33750613464OAI: oai:DiVA.org:kth-37717DiVA, id: diva2:435164
Note
QC 20110817Available from: 2011-08-17 Created: 2011-08-16 Last updated: 2012-03-20Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Johansson, Ted
By organisation
Microelectronics and Information Technology, IMIT
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 25 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf