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Single-frequency operation of a high-power, long-wavelength semiconductor disk laser
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
2005 (English)In: Optics Letters, ISSN 0146-9592, E-ISSN 1539-4794, Vol. 30, no 17, 2260-2262 p.Article in journal (Refereed) Published
Abstract [en]

An optically pumped, high-power, single-frequency semiconductor disk laser is demonstrated. A thin (50 mu m) diamond bonded to an InGaAsP gain chip provides the combined functions of heat removal and spectral filtering, thus eliminating the need for the additional intracavity etalons that are usually employed for single-frequency operation. In a short cavity (4 mm) configuration we obtained a maximum output power of 470 mW at 0 degrees C and 170 mW at 20 degrees C in a near-diffraction-limited beam (M-2 < 1.2). The emission wavelength was 1549 nm and the linewidth was less than 200 MHz.

Place, publisher, year, edition, pages
2005. Vol. 30, no 17, 2260-2262 p.
Keyword [en]
SURFACE-EMITTING LASER, CW, BEAM, NM
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-37814DOI: 10.1364/OL.30.002260ISI: 000231436900024Scopus ID: 2-s2.0-25144517341OAI: oai:DiVA.org:kth-37814DiVA: diva2:435306
Note
QC 20110818Available from: 2011-08-18 Created: 2011-08-17 Last updated: 2017-12-08Bibliographically approved

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