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Strong 1.3-1.6 mu m light emission from metamorphic InGaAs quantum wells on GaAs
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2005 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 86, no 17, 171902- p.Article in journal (Refereed) Published
Abstract [en]

We demonstrate strong 1.3-1.6 mu m photoluminescence (PL) from InGaAs quantum wells (QWs) grown on alloy graded InGaAs buffer layers on GaAs by molecular beam epitaxy. The epistructures show quite smooth surfaces with an average surface roughness less than 2 nm. The PL intensity is comparable with those from InAs quantum dots and InGaAs QWs on GaAs, and InGaAsP QWs on InP at similar wavelengths, but stronger than those from GaInNAs QWs (at least 10 times higher at around 1.5-1.6 mu m). The excellent optical quality implies that the metamorphic approach could be a promising alternative to GaInNAs(Sb) QWs for 1.55 mu m lasers on GaAs.

Place, publisher, year, edition, pages
2005. Vol. 86, no 17, 171902- p.
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Physical Sciences
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URN: urn:nbn:se:kth:diva-37882DOI: 10.1063/1.1906308ISI: 000229185500014Scopus ID: 2-s2.0-20844433033OAI: oai:DiVA.org:kth-37882DiVA: diva2:435425
Available from: 2011-08-18 Created: 2011-08-18 Last updated: 2017-12-08Bibliographically approved

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Akram, M. NadeemBerggren, Jesper
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