Change search
ReferencesLink to record
Permanent link

Direct link
Strong 1.3-1.6 mu m light emission from metamorphic InGaAs quantum wells on GaAs
Show others and affiliations
2005 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 86, no 17, 171902- p.Article in journal (Refereed) Published
Abstract [en]

We demonstrate strong 1.3-1.6 mu m photoluminescence (PL) from InGaAs quantum wells (QWs) grown on alloy graded InGaAs buffer layers on GaAs by molecular beam epitaxy. The epistructures show quite smooth surfaces with an average surface roughness less than 2 nm. The PL intensity is comparable with those from InAs quantum dots and InGaAs QWs on GaAs, and InGaAsP QWs on InP at similar wavelengths, but stronger than those from GaInNAs QWs (at least 10 times higher at around 1.5-1.6 mu m). The excellent optical quality implies that the metamorphic approach could be a promising alternative to GaInNAs(Sb) QWs for 1.55 mu m lasers on GaAs.

Place, publisher, year, edition, pages
2005. Vol. 86, no 17, 171902- p.
National Category
Physical Sciences
URN: urn:nbn:se:kth:diva-37882DOI: 10.1063/1.1906308ISI: 000229185500014ScopusID: 2-s2.0-20844433033OAI: diva2:435425
Available from: 2011-08-18 Created: 2011-08-18 Last updated: 2011-08-18Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Akram, M. NadeemBerggren, Jesper
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
Applied Physics Letters
Physical Sciences

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 16 hits
ReferencesLink to record
Permanent link

Direct link