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Rapid spin flip in a spin subband at an anticrossing region in a slightly asymmetric modulation-doped quantum well
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
2008 (English)In: Physica. E, Low-Dimensional systems and nanostructures, ISSN 1386-9477, E-ISSN 1873-1759, Vol. 40, no 6, 2081-2083 p.Article in journal (Refereed) Published
Abstract [en]

The spin splitting due to structure and bulk inversion asymmetry is calculated for electron subbands in wide slightly asymmetric InGaSb quantum wells. At anticrossings, rapid spin flips in two steps are found as the in-plane wave vector along the [1 1] direction is increased by 0.002 nm(-1). First the y-component and then the x-component is flipped. A change of bias of about 1 meV across the quantum well is sufficient move the Fermi level across the anticrossing region.

Place, publisher, year, edition, pages
2008. Vol. 40, no 6, 2081-2083 p.
Keyword [en]
spin splitting, Rashba effect, modulation-doping, quantum well
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-38112DOI: 10.1016/j.physe.2007.09.112ISI: 000255717400095Scopus ID: 2-s2.0-41449114125OAI: oai:DiVA.org:kth-38112DiVA: diva2:435964
Note
13th International Conference on Modulated Semiconductor Structures (MSS13)/17th International Conference on Electronic Properties of 2-Dimensional Systems Location: Genova, ITALY Date: JUL 15-20, 2007Available from: 2011-08-22 Created: 2011-08-22 Last updated: 2017-12-08Bibliographically approved

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