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Temperature and angular dependences of dynamic spin-polarized resonant tunneling in CoFeB/MgO/NiFe junctions
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2008 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 103, no 7, 07A904- p.Article in journal (Refereed) Published
Abstract [en]

The bias dependence of tunneling magnetoresistance oscillations due to dynamic resonant tunneling in CoFeB/MgO/NiFe magnetic tunnel junctions was studied as functions of temperature and the relative magnetization angle of the two magnetic layers. The effect of temperature is consistent with thermal smearing, while that of the relative magnetic orientation was typical of a spin valve. A model of tunneling between spin-split free electron bands using the exact solution of the Schrodinger equation for a trapezoidal tunnel barrier agrees with experiment, underscoring the simplicity of dynamic resonant tunneling.

Place, publisher, year, edition, pages
2008. Vol. 103, no 7, 07A904- p.
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Physical Sciences
URN: urn:nbn:se:kth:diva-38110DOI: 10.1063/1.2831393ISI: 000255043200160ScopusID: 2-s2.0-42149136773OAI: diva2:435977
52nd Annual Conference on Magnetism and Magnetic Materials Location: Tampa, FL Date: NOV 05-09, 2007 Available from: 2011-08-22 Created: 2011-08-22 Last updated: 2011-08-22Bibliographically approved

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Zhou, YanÅkerman, Johan
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Microelectronics and Applied Physics, MAP
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