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Relative concentration and structure of native defects in GaP
KTH, School of Information and Communication Technology (ICT), Material Physics.
2005 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 72, no 19, 195213- p.Article in journal (Refereed) Published
Abstract [en]

The native defects in the compound semiconductor GaP have been studied using a pseudopotential density functional theory method in order to determine their relative concentrations and the most stable charge states. The electronic and atomic structures are presented and the defect concentrations are estimated using calculated formation energies. Relaxation effects are taken into account fully and produce negative-U charge transfer levels for V-P and P-Ga. The concentration of V-Ga is in good agreement with the results of positron annihilation experiments. The charge transfer levels presented compare qualitatively well with experiments where available. The effect of stoichiometry on the defect concentrations is also described and is shown to be considerable. The lowest formation energies are found for P-Ga(+2) in p-type and V-Ga(-3) in n-type GaP under P-rich conditions, and for Ga-P(-2) in n-type GaP under Ga-rich conditions. Finally, the finite size errors arising from the use of supercells with periodic boundary conditions are examined.

Place, publisher, year, edition, pages
2005. Vol. 72, no 19, 195213- p.
National Category
Physical Sciences
URN: urn:nbn:se:kth:diva-38259DOI: 10.1103/PhysRevB.72.195213ISI: 000233603700067ScopusID: 2-s2.0-29844457085OAI: diva2:436454
QC 20110823Available from: 2011-08-23 Created: 2011-08-23 Last updated: 2011-08-23Bibliographically approved

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