Reduced self-heating by strained silicon substrate engineering
2008 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 254, no 19, 6182-6185 p.Article in journal (Refereed) Published
Substrate engineering innovations such as SOI and the use of Si/SiGe virtual substrates become necessary in order to maintain performance leverage of integrated circuits with continued scaling. The relevance of thermal effects in device design increases since the thermal conductivity of these new materials is poor. The electrical performance of devices fabricated on thin virtual substrates grown by two different techniques is presented. It is found that self-heating is reduced and that thermal resistance measurements agree with modelling predictions. The reduction in performance enhancement seen in many strained Si MOSFETs is found here to be largely due to self-heating effects, rather than parasitics or the loss of strain.
Place, publisher, year, edition, pages
2008. Vol. 254, no 19, 6182-6185 p.
strained silicon, self heating, MOSFET
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-38080DOI: 10.1016/j.apsusc.2008.02.172ISI: 000256932500043ScopusID: 2-s2.0-45049087611OAI: oai:DiVA.org:kth-38080DiVA: diva2:436543
5th International Symposium on the Control of Semiconductor Interf Location: Tokyo Metropolitan Univ, Tokyo, JAPAN Date: NOV 12-14, 20072011-08-242011-08-222011-08-24Bibliographically approved